SIR798DP-T1-GE3
MOSFET N-CH 30V 60A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIR798DP-T1-GE3 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current capability of 60A at a case temperature (Tc). The device exhibits a low on-resistance (Rds(on)) of 2.05mOhm at 20A and 10V gate-source voltage (Vgs), minimizing conduction losses. With a maximum power dissipation of 83W (Tc), it is suitable for demanding thermal environments. The SIR798DP-T1-GE3 incorporates a body Schottky diode for enhanced performance. It utilizes advanced MOSFET technology and is housed in a PowerPAK® SO-8 surface-mount package, available on tape and reel. Key parameters include a gate charge (Qg) of 130 nC at 10V and input capacitance (Ciss) of 5050 pF at 15V. This MOSFET is utilized across various industries including automotive and industrial power management.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.05mOhm @ 20A, 10V |
| FET Feature | Schottky Diode (Body) |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5050 pF @ 15 V |
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