SIR788DP-T1-GE3
MOSFET N-CH 30V 60A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIR788DP-T1-GE3 is an N-Channel MOSFET from the SkyFET® and TrenchFET® series. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 60A at 25°C case temperature. The PowerPAK® SO-8 package facilitates surface mounting and dissipates up to 48W at 25°C case temperature. Key electrical characteristics include a maximum Rds(on) of 3.4mOhm at 20A and 10V Vgs, with a drive voltage range of 4.5V to 10V. Input capacitance (Ciss) is specified at 2873pF maximum at 15V Vds, and the maximum gate charge (Qg) is 75nC at 10V Vgs. This MOSFET incorporates a Schottky diode in its body and operates within a temperature range of -55°C to 150°C. It is supplied in Tape & Reel packaging. This component finds application in power management solutions for automotive, industrial, and computing sectors.
Additional Information
Series: SkyFET®, TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 20A, 10V |
| FET Feature | Schottky Diode (Body) |
| Power Dissipation (Max) | 5W (Ta), 48W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2873 pF @ 15 V |
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