SIR696DP-T1-GE3
MOSFET N-CH 125V 60A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SIR696DP-T1-GE3 is an N-Channel ThunderFET® MOSFET designed for demanding applications. This component features a 125 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 60 A at 25°C (Tc), with a maximum power dissipation of 104 W (Tc). The device boasts a low on-resistance (Rds On) of 11.5 mOhm at 20 A and 10 V (Vgs). Key electrical characteristics include a gate charge (Qg) of 38 nC at 10 V and input capacitance (Ciss) of 1410 pF at 75 V (Vds). The SIR696DP-T1-GE3 utilizes MOSFET technology and is housed in a PowerPAK® SO-8 package for surface mounting. It operates across a temperature range of -55°C to 150°C (TJ) and is supplied on tape and reel. This MOSFET is suitable for use in power supply and automotive applications.
Additional Information
Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 125 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1410 pF @ 75 V |
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