SIR692DP-T1-RE3
MOSFET N-CH 250V 24.2A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix ThunderFET® SIR692DP-T1-RE3 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 250V drain-source voltage (Vdss) and a continuous drain current rating of 24.2A at 25°C (Tc), with a maximum power dissipation of 104W (Tc). The SIR692DP-T1-RE3 offers a low on-resistance of 63mOhm at 10A and 10V (Vgs), contributing to reduced conduction losses. Key parameters include a gate charge (Qg) of 30nC at 7.5V and input capacitance (Ciss) of 1405pF at 125V. It is housed in a surface-mount PowerPAK® SO-8 package, supplied on tape and reel. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is suitable for use in industrial power supplies, automotive applications, and renewable energy systems.
Additional Information
Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 63mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 7.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1405 pF @ 125 V |
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