SIR690DP-T1-RE3
MOSFET N-CH 200V 34.4A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix ThunderFET® SIR690DP-T1-RE3 is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a 200V Drain-to-Source voltage (Vdss) and a continuous drain current of 34.4A (Tc) at 25°C, with a maximum power dissipation of 104W (Tc). The SIR690DP-T1-RE3 offers a low on-resistance (Rds On) of 35mOhm at 20A and 10V, supported by a gate charge (Qg) of 48 nC. Its input capacitance (Ciss) is 1935 pF at 100V. The MOSFET is housed in a PowerPAK® SO-8 surface mount package, facilitating efficient thermal management. Operating across a temperature range of -55°C to 150°C (TJ), this component is suitable for use in power supply units, electric vehicle systems, and industrial motor control. The device is supplied on a Tape & Reel (TR) for automated assembly.
Additional Information
Series: ThunderFET®RoHS Status: unknownManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1935 pF @ 100 V |
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