SIR690DP-T1-GE3
MOSFET N-CH 200V 34.4A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SIR690DP-T1-GE3 is a ThunderFET® N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 200V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 34.4A at 25°C (Tc), with a maximum power dissipation of 104W (Tc). The low on-resistance, specified at 35mOhm maximum at 20A and 10V Vgs, minimizes conduction losses. Key electrical parameters include a gate charge (Qg) of 37nC at 7.5V and input capacitance (Ciss) of 1935pF at 100V. The SIR690DP-T1-GE3 is housed in a PowerPAK® SO-8 surface-mount package, suitable for demanding thermal management. This component is commonly utilized in industrial power supplies, server power, electric vehicle charging, and renewable energy systems. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 7.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1935 pF @ 100 V |
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