SIR688DP-T1-GE3
MOSFET N-CH 60V 60A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SIR688DP-T1-GE3. This N-Channel Power MOSFET features a 60V Drain-to-Source Voltage (Vdss) and a continuous drain current capability of 60A (Tc). With a low on-resistance of 3.5mOhm at 20A and 10V Vgs, it delivers efficient power handling. The device is packaged in a PowerPAK® SO-8 surface mount configuration and operates across a temperature range of -55°C to 150°C. Key parameters include a gate charge (Qg) of 66 nC at 10V and input capacitance (Ciss) of 3105 pF at 30V. Maximum power dissipation is rated at 83W (Tc) and 5.4W (Ta). This component finds application in power management, automotive, and industrial systems requiring robust switching performance.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.4W (Ta), 83W (Tc) |
| Vgs(th) (Max) @ Id | 2.7V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3105 pF @ 30 V |
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