SIR681DP-T1-RE3
MOSFET P-CH 80V 17.6A/71.9A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIR681DP-T1-RE3 is a P-Channel Power MOSFET from the TrenchFET® Gen IV series. This component offers a drain-to-source voltage (Vdss) of 80 V and supports continuous drain current (Id) of 17.6 A at 25°C ambient temperature and 71.9 A at 25°C case temperature. With a maximum power dissipation of 6.25 W (Ta) and 104 W (Tc), it is designed for demanding applications. Key electrical parameters include a low on-resistance (Rds On) of 11.2 mOhm at 10 A and 10 V, and a gate charge (Qg) of 105 nC at 10 V. The input capacitance (Ciss) is a maximum of 4850 pF at 40 V. This surface mount device is packaged in a PowerPAK® SO-8 and operates across a temperature range of -55°C to 150°C (TJ). The SIR681DP-T1-RE3 is suitable for use in power management, automotive, and industrial applications. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET® Gen IVRoHS Status: unknownManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17.6A (Ta), 71.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.2mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4850 pF @ 40 V |
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