SIR670DP-T1-GE3
MOSFET N-CH 60V 60A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIR670DP-T1-GE3 is an N-Channel TrenchFET® Power MOSFET designed for demanding power applications. This component features a 60V drain-source breakdown voltage and can handle a continuous drain current of 60A at 25°C (Tc). The device offers a low on-resistance of 4.8mOhm maximum at 20A and 10V, ensuring high efficiency. With a total power dissipation capability of 56.8W at 25°C (Tc), it is suitable for power management in automotive, industrial, and consumer electronics. The SIR670DP-T1-GE3 utilizes a PowerPAK® SO-8 surface mount package for efficient thermal management. Key electrical characteristics include a gate charge of 63 nC maximum at 10V and input capacitance of 2815 pF maximum at 30V. This MOSFET operates across a wide temperature range from -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 56.8W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2815 pF @ 30 V |
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