SIR664DP-T1-GE3
MOSFET N-CH 60V 60A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® MOSFET N-Channel SIR664DP-T1-GE3. This device features a 60V drain-source voltage and 60A continuous drain current at 25°C (Tc). The N-Channel MOSFET is housed in a PowerPAK® SO-8 package, facilitating surface mount integration. Key electrical parameters include a low Rds(On) of 6mOhm at 20A and 10V, and a maximum gate charge (Qg) of 40 nC at 10V. Input capacitance (Ciss) is 1750 pF at 30V. This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 20A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1750 pF @ 30 V |
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