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SIR664DP-T1-GE3

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SIR664DP-T1-GE3

MOSFET N-CH 60V 60A PPAK SO-8

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix TrenchFET® MOSFET N-Channel SIR664DP-T1-GE3. This device features a 60V drain-source voltage and 60A continuous drain current at 25°C (Tc). The N-Channel MOSFET is housed in a PowerPAK® SO-8 package, facilitating surface mount integration. Key electrical parameters include a low Rds(On) of 6mOhm at 20A and 10V, and a maximum gate charge (Qg) of 40 nC at 10V. Input capacitance (Ciss) is 1750 pF at 30V. This component is suitable for applications in automotive and industrial power management.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CasePowerPAK® SO-8
Mounting TypeSurface Mount
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Rds On (Max) @ Id, Vgs6mOhm @ 20A, 10V
FET Feature-
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackagePowerPAK® SO-8
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1750 pF @ 30 V

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