SIR662DP-T1-GE3
MOSFET N-CH 60V 60A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIR662DP-T1-GE3 is a 60 V N-Channel TrenchFET® MOSFET in a PowerPAK® SO-8 package. This device offers a continuous drain current of 60A (Tc) and a maximum on-resistance of 2.7mOhm at 20A and 10V, achieved with a 4.5V gate drive. Key parameters include a gate charge (Qg) of 96 nC (max) at 10V and input capacitance (Ciss) of 4365 pF (max) at 30V. Power dissipation capabilities are 6.25W (Ta) and 104W (Tc). This MOSFET is suitable for demanding applications across automotive, industrial, and power supply sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 96 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4365 pF @ 30 V |
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