SIR642DP-T1-GE3
MOSFET N-CH 40V 60A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIR642DP-T1-GE3 is an N-Channel Power MOSFET from the TrenchFET® series, housed in a PowerPAK® SO-8 package. This device features a Drain-to-Source Voltage (Vdss) of 40V and a continuous drain current (Id) rating of 60A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 2.4mOhm at 15A and 10V, it offers low conduction losses. The MOSFET is designed for surface mounting and operates across a temperature range of -55°C to 150°C. Key parameters include a gate charge (Qg) of 84 nC at 10V and an input capacitance (Ciss) of 4155 pF at 20V. Power dissipation is rated at 4.8W (Ta) and 41.7W (Tc). This component is suitable for applications in power management, automotive, and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4.8W (Ta), 41.7W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4155 pF @ 20 V |
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