SIR640DP-T1-GE3
MOSFET N-CH 40V 60A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SIR640DP-T1-GE3 is an N-Channel Power MOSFET designed for demanding power applications. This device features a 40V drain-source voltage rating and a continuous drain current capability of 60A at 25°C (Tc). The SIR640DP-T1-GE3 offers a low on-resistance of 1.7mOhm maximum at 20A and 10V Vgs, with a driver voltage range from 4.5V to 10V. Key parameters include a maximum gate charge of 113 nC at 10V and input capacitance of 4930 pF at 20V. With a maximum power dissipation of 104W (Tc), this MOSFET is housed in a PowerPAK® SO-8 package, suitable for surface mounting. Operating temperature range is -55°C to 150°C (TJ). This component is utilized in industrial, automotive, and consumer electronics sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 113 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4930 pF @ 20 V |
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