SIR640ADP-T1-GE3
MOSFET N-CH 40V 41.6A/100A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIR640ADP-T1-GE3 is an N-Channel Power MOSFET from the TrenchFET® series. This device features a 40V drain-to-source voltage (Vdss) and offers a continuous drain current of 41.6A at 25°C ambient and 100A at 25°C case temperature. The SIR640ADP-T1-GE3 exhibits a low on-resistance of 2mOhm maximum at 20A and 10V gate-source voltage. It is designed for efficient power handling, with a maximum power dissipation of 6.25W (Ta) and 104W (Tc). Key parameters include a gate charge (Qg) of 90 nC maximum at 10V and input capacitance (Ciss) of 4240 pF maximum at 20V. This MOSFET is constructed using Metal Oxide technology and is available in a PowerPAK® SO-8 package, suitable for surface mounting. The operating temperature range is -55°C to 150°C (TJ). Applications for this component are found in automotive, industrial, and consumer electronics power management systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 41.6A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4240 pF @ 20 V |
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