SIR638DP-T1-GE3
MOSFET N-CH 40V 100A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Vishay Siliconix SIR638DP-T1-GE3 is an N-Channel Power MOSFET from the TrenchFET® series, packaged in a PowerPAK® SO-8 for surface mounting. This component features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 100A at 25°C (Tc), with a maximum power dissipation of 104W (Tc). The on-resistance (Rds On) is specified at a maximum of 0.88mOhm at 20A and 10V gate-source voltage. Key characteristics include a gate charge (Qg) of 204 nC (Max) at 10V and input capacitance (Ciss) of 10500 pF (Max) at 20V. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is suitable for applications in power management and high-current switching, commonly found in automotive and industrial power systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.88mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +20V, -16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 204 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10500 pF @ 20 V |
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