SIR632DP-T1-RE3
MOSFET N-CH 150V 29A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix ThunderFET® SIR632DP-T1-RE3 is a 150 V N-Channel Power MOSFET. This device features a maximum continuous drain current of 29 A (Tc) and a maximum power dissipation of 69.5 W (Tc). The Rds(on) is specified at 34.5 mOhm at 10 A and 10 V. Key parameters include a gate charge (Qg) of 17 nC at 7.5 V and input capacitance (Ciss) of 740 pF at 75 V. The SIR632DP-T1-RE3 utilizes a PowerPAK® SO-8 surface mount package, supplied on tape and reel. This component is suitable for applications in power supplies, automotive electronics, and industrial motor control.
Additional Information
Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Rds On (Max) @ Id, Vgs | 34.5mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 69.5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 7.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 75 V |
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