SIR624DP-T1-RE3
MOSFET N-CH 200V 5.7A/18.6A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix ThunderFET® SIR624DP-T1-RE3 is an N-Channel Power MOSFET designed for demanding applications. This device features a 200V drain-source voltage (Vdss) and supports continuous drain current of 5.7A at ambient temperature (Ta) and 18.6A at case temperature (Tc). With a maximum power dissipation of 5W (Ta) and 52W (Tc), it is suitable for a variety of power management tasks. The SIR624DP-T1-RE3 offers a low on-resistance (Rds On) of 60mOhm at 10A and 10V, with a gate-source drive voltage range of 7.5V to 10V. Key electrical characteristics include a maximum gate charge (Qg) of 30 nC at 10V and input capacitance (Ciss) of 1110 pF at 100V. This MOSFET is packaged in a surface-mount PowerPAK® SO-8, supplied on tape and reel. It operates across a wide temperature range of -55°C to 150°C (TJ). Applications include power supplies, battery management, and motor control systems.
Additional Information
Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Ta), 18.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1110 pF @ 100 V |
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