SIR622DP-T1-RE3
MOSFET N-CH 150V 12.6A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix ThunderFET® SIR622DP-T1-RE3 is a 150V N-Channel MOSFET designed for demanding power applications. It offers a continuous drain current of 12.6A at 25°C ambient and 51.6A at 25°C case temperature. The device features a maximum on-resistance of 17.7mOhm at 20A and 10V gate-source voltage, with a 10V maximum gate drive. Key electrical characteristics include a 41 nC maximum gate charge and 1516 pF maximum input capacitance. This surface mount PowerPAK® SO-8 package provides efficient thermal management with a maximum power dissipation of 6.25W (ambient) and 104W (case). Operating across a temperature range of -55°C to 150°C, the SIR622DP-T1-RE3 is suitable for use in power supplies, motor control, and automotive systems. The component is supplied in Tape & Reel packaging.
Additional Information
Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.6A (Ta), 51.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 17.7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1516 pF @ 75 V |
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