SIR622DP-T1-GE3
MOSFET N-CH 150V 51.6A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIR622DP-T1-GE3 is an N-Channel Power MOSFET from the ThunderFET® series, designed for high-efficiency power conversion. This device features a 150V drain-source voltage (Vdss) and a continuous drain current (Id) of 51.6A at 25°C (Tc). The SIR622DP-T1-GE3 offers a maximum on-resistance (Rds On) of 17.7mOhm at 20A and 10V Vgs. It is packaged in a PowerPAK® SO-8 for efficient thermal management, supporting a maximum power dissipation of 104W (Tc). Key parameters include a gate charge (Qg) of 31 nC at 7.5V and input capacitance (Ciss) of 1516 pF at 75V. This MOSFET is suitable for demanding applications in the automotive and industrial sectors, operating across a temperature range of -55°C to 150°C.
Additional Information
Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 51.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 17.7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 7.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1516 pF @ 75 V |
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