SIR618DP-T1-GE3
MOSFET N-CH 200V 14.2A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIR618DP-T1-GE3 is an N-Channel Power MOSFET from the ThunderFET® series. This device features a 200V drain-source breakdown voltage and a continuous drain current capability of 14.2A at 25°C case temperature, with a maximum power dissipation of 48W (Tc). The on-resistance (Rds On) is specified at a maximum of 95mOhm at 8A and 10V gate-source voltage. Key characteristics include a gate charge of 16 nC at 7.5V and input capacitance of 740 pF at 100V. The SIR618DP-T1-GE3 utilizes a surface mount PowerPAK® SO-8 package and operates across a temperature range of -55°C to 150°C. This component is suitable for applications in power supply units, automotive, and industrial power control systems.
Additional Information
Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 7.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 100 V |
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