SIR616DP-T1-GE3
MOSFET N-CH 200V 20.2A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix ThunderFET® SIR616DP-T1-GE3 is an N-Channel MOSFET designed for high-efficiency power conversion applications. This component features a 200V Drain-to-Source Voltage (Vdss) and a continuous drain current capability of 20.2A (Tc) at 25°C. The device offers a low on-resistance of 50.5mOhm maximum at 10A and 10V, coupled with a maximum power dissipation of 52W (Tc). Its gate charge is specified at 28nC maximum at 7.5V, and input capacitance (Ciss) is 1450pF maximum at 100V. Packaged in the space-saving PowerPAK® SO-8, the SIR616DP-T1-GE3 is suitable for surface mounting and operates across a temperature range of -55°C to 150°C. This MOSFET is commonly utilized in industrial power supplies, automotive electronics, and renewable energy systems.
Additional Information
Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 50.5mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 52W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 7.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 100 V |
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