SIR610DP-T1-RE3
MOSFET N-CH 200V 35.4A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix ThunderFET® N-Channel Power MOSFET, part number SIR610DP-T1-RE3, is designed for high-efficiency power switching applications. This device features a Drain-to-Source Voltage (Vdss) of 200 V and a continuous drain current (Id) of 35.4 A at 25°C (Tc). The SIR610DP-T1-RE3 offers a low on-resistance of 31.9 mOhm maximum at 10 A and 10 V, contributing to reduced conduction losses. With a maximum power dissipation of 104 W (Tc) and a maximum junction temperature of 150°C, it is suitable for demanding thermal environments. The component is housed in a PowerPAK® SO-8 surface mount package and supplied on tape and reel. Key parameters include a gate charge (Qg) of 38 nC at 10 V and an input capacitance (Ciss) of 1380 pF at 100 V. This MOSFET is utilized in industries such as industrial power supplies, automotive, and renewable energy systems.
Additional Information
Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 31.9mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1380 pF @ 100 V |
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