SIR606DP-T1-GE3
MOSFET N-CH 100V 37A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SIR606DP-T1-GE3 is an N-channel Power MOSFET from the TrenchFET® series. This device features a 100V drain-source breakdown voltage and a continuous drain current capability of 37A at 25°C (Tc), with a maximum power dissipation of 44.5W (Tc). The low on-resistance is specified at 16.2mOhm maximum at 15A and 10V Vgs. Designed for surface mounting in the PowerPAK® SO-8 package, it offers a gate charge of 22nC typical at 6V and an input capacitance of 1360pF maximum at 50V. The operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in power management, industrial, and automotive sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 37A (Tc) |
| Rds On (Max) @ Id, Vgs | 16.2mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 44.5W (Tc) |
| Vgs(th) (Max) @ Id | 3.6V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 6 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1360 pF @ 50 V |
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