SIR588DP-T1-RE3
N-CHANNEL 80 V (D-S) MOSFET POWEManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIR588DP-T1-RE3 is an N-Channel Power MOSFET from the TrenchFET® Gen V series. This component offers a Drain-to-Source Voltage (Vdss) of 80 V and features a low on-resistance of 8 mOhm maximum at 10A, 10V. With continuous drain current ratings of 17.2A (Ta) and 59.5A (Tc), and power dissipation capabilities of 5W (Ta) and 59.5W (Tc), this device is suitable for demanding power applications. The SIR588DP-T1-RE3 is housed in a PowerPAK® SO-8 surface mount package, facilitating efficient thermal management. Key electrical parameters include a maximum gate charge (Qg) of 28.5 nC at 10V and input capacitance (Ciss) of 1380 pF at 40V. It operates within a temperature range of -55°C to 150°C. This MOSFET is commonly utilized in automotive, industrial, and power supply applications.
Additional Information
Series: TrenchFET® Gen VRoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17.2A (Ta), 59.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 59.5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 28.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1380 pF @ 40 V |
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