SIR586DP-T1-RE3
N-CHANNEL 80 V (D-S) MOSFET POWEManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® Gen V SIR586DP-T1-RE3 is an N-Channel Power MOSFET designed for demanding applications. This component features a 80 V drain-source voltage (Vdss) and a maximum continuous drain current of 20.7 A at ambient temperature (Ta) and 78.4 A at case temperature (Tc). With a low Rds(on) of 5.8 mOhm at 10 A and 10 V, it offers superior conduction efficiency. The device supports a gate drive range of 7.5 V to 10 V and exhibits a gate charge (Qg) of 38 nC maximum at 10 V. Input capacitance (Ciss) is 1905 pF maximum at 40 V. The SIR586DP-T1-RE3 is housed in a PowerPAK® SO-8 surface-mount package and operates across a wide temperature range of -55°C to 150°C. Power dissipation is rated at 5 W (Ta) and 71.4 W (Tc). This MOSFET is commonly utilized in power management, automotive, and industrial power conversion systems.
Additional Information
Series: TrenchFET® Gen VRoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20.7A (Ta), 78.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 71.4W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1905 pF @ 40 V |
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