SIR584DP-T1-RE3
N-CHANNEL 80 V (D-S) MOSFET POWEManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIR584DP-T1-RE3 is an N-channel TrenchFET® Gen V Power MOSFET designed for high-efficiency power conversion applications. This device features a 80 V drain-to-source voltage (Vdss) and boasts exceptionally low on-resistance of 3.9 mOhm at 15A and 10V Vgs. It supports a continuous drain current of 24.7A at 25°C ambient and up to 100A at 25°C case temperature, with a maximum power dissipation of 5W (Ta) and 83.3W (Tc). Key parameters include a gate charge (Qg) of 56 nC at 10V and input capacitance (Ciss) of 2800 pF at 40V. The SIR584DP-T1-RE3 is housed in a surface-mount PowerPAK® SO-8 package, ensuring excellent thermal performance and suitability for demanding applications in the automotive, industrial, and consumer electronics sectors. It operates across a wide temperature range of -55°C to 150°C.
Additional Information
Series: TrenchFET® Gen VRoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24.7A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.9mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 83.3W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 40 V |
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