SIR582DP-T1-RE3
N-CHANNEL 80 V (D-S) MOSFET POWEManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIR582DP-T1-RE3 is an N-Channel TrenchFET® Gen V Power MOSFET designed for high-efficiency power switching applications. This device features a maximum drain-source voltage (Vds) of 80V. It offers a continuous drain current (Id) of 28.9A at 25°C ambient temperature and 116A at 25°C case temperature. The on-resistance (Rds On) is rated at a low 3.4mOhm maximum at 15A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 67 nC maximum at 10V and input capacitance (Ciss) of 3360 pF maximum at 40V. The MOSFET is housed in a PowerPAK® SO-8 surface mount package, suitable for demanding thermal management. Maximum power dissipation is 5.6W (Ta) and 92.5W (Tc). This component is utilized in automotive and industrial power conversion systems.
Additional Information
Series: TrenchFET® Gen VRoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28.9A (Ta), 116A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.6W (Ta), 92.5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3360 pF @ 40 V |
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