SIR580DP-T1-RE3
N-CHANNEL 80-V (D-S) MOSFETManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIR580DP-T1-RE3 is an N-channel MOSFET from the TrenchFET® Gen V series. This component features an 80V drain-to-source voltage (Vdss) and a maximum continuous drain current of 35.8A at 25°C ambient and 146A at 25°C case temperature. It offers a low on-resistance of 2.7mOhm maximum at 20A and 10V. The device supports gate drive voltages up to ±20V and has a typical gate charge of 76 nC at 10V. With a maximum power dissipation of 6.25W (ambient) and 104W (case), it is suitable for demanding applications. The SIR580DP-T1-RE3 is housed in a surface-mount PowerPAK® SO-8 package and is supplied on tape and reel. This MOSFET is commonly employed in automotive, industrial, and power supply applications.
Additional Information
Series: TrenchFET® Gen VRoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35.8A (Ta), 146A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 76 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4100 pF @ 40 V |
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