SIR5808DP-T1-RE3
N-CHANNEL 80 V (D-S) MOSFET POWEManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SIR5808DP-T1-RE3 is an N-Channel TrenchFET® Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 80 V and a continuous drain current (Id) of 18.8 A at 25°C ambient or 66.8 A at 25°C case temperature. The device offers a maximum on-resistance (Rds On) of 157 mOhm at 10 A and 10 V. With a maximum power dissipation of 5.2 W (ambient) or 65.7 W (case), it supports efficient thermal management. Key parameters include a gate charge (Qg) of 24 nC at 10 V and input capacitance (Ciss) of 1210 pF at 40 V. The SIR5808DP-T1-RE3 is housed in a PowerPAK® SO-8 package for surface mounting and operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for various power management solutions in automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: unknownManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18.8A (Ta), 66.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 157mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.2W (Ta), 65.7W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1210 pF @ 40 V |
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