SIR5802DP-T1-RE3
N-CHANNEL 80 V (D-S) MOSFET POWEManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® Gen V SIR5802DP-T1-RE3 is an N-channel MOSFET designed for high-efficiency power switching applications. This device features a 80V drain-to-source breakdown voltage (Vdss) and a low on-resistance (Rds(on)) of 2.9mOhm maximum at 20A and 10V gate-to-source voltage. The continuous drain current capability is 33.6A at 25°C ambient temperature and 137.5A at 25°C case temperature. With a maximum power dissipation of 6.25W (Ta) and 104W (Tc), it is suitable for demanding thermal environments. The SIR5802DP-T1-RE3 utilizes advanced trench technology for superior performance and is housed in a PowerPAK® SO-8 surface-mount package, facilitating efficient board layout. Typical applications include power supplies, battery management systems, and load switching in automotive and industrial sectors. Key electrical parameters include a maximum gate charge of 60 nC at 10V and input capacitance of 3020 pF at 40V. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET® Gen VRoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33.6A (Ta), 137.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.9mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3020 pF @ 40 V |
Request a Quote
Clients Also Buy
SISS54DN-T1-GE3
N-CHANNEL 30-V (D-S) MOSFET POWE
SIDR5802EP-T1-RE3
N-CHANNEL 80 V (D-S) 175C MOSFET
SIR500DP-T1-RE3
N-CHANNEL 30 V (D-S) 150C MOSFET
