SIR578DP-T1-RE3
N-CHANNEL 150 V (D-S) MOSFET POWManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIR578DP-T1-RE3 is a TrenchFET® Gen V N-channel power MOSFET designed for high-efficiency power conversion applications. This device features a Drain-Source Voltage (Vdss) of 150V and offers a low on-resistance of 8.8mOhm maximum at 20A and 10V gate drive. Continuous drain current capability is 17.2A at ambient temperature (Ta) and 70.2A at case temperature (Tc). Power dissipation is rated at 6.25W (Ta) and 104W (Tc). The MOSFET is housed in a PowerPAK® SO-8 surface-mount package, suitable for demanding applications in automotive, industrial, and consumer electronics sectors. Key electrical characteristics include a maximum gate charge (Qg) of 45nC at 10V and input capacitance (Ciss) of 2540pF at 75V. Operating temperature range is -55°C to 150°C (TJ). This component is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET® Gen VRoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17.2A (Ta), 70.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2540 pF @ 75 V |
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