SIR576DP-T1-RE3
N-CHANNEL 150 V (D-S) MOSFET POWManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SIR576DP-T1-RE3 is an N-Channel Power MOSFET from the TrenchFET® Gen IV series. This device offers a 150 V drain-source breakdown voltage and a continuous drain current capability of 11.1 A at 25°C ambient and 42.4 A at 25°C case temperature. The SIR576DP-T1-RE3 features a maximum on-resistance of 16 mOhm at 10 A and 10 V, with a gate charge of 38 nC at 10 V. Designed for surface mount applications in the PowerPAK® SO-8 package, it supports a maximum power dissipation of 5 W (ambient) and 71.4 W (case). Operating temperature ranges from -55°C to 150°C. This component is utilized in industrial automation, power supplies, and automotive applications.
Additional Information
Series: TrenchFET® Gen IVRoHS Status: unknownManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.1A (Ta), 42.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 71.4W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1870 pF @ 75 V |
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