SIR574DP-T1-RE3
N-CHANNEL 150 V (D-S) MOSFET POWManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SIR574DP-T1-RE3 is an N-Channel TrenchFET® Gen IV Power MOSFET designed for demanding applications. This surface mount device offers a Drain-to-Source Voltage (Vdss) of 150V and continuous drain current capabilities of 12.1A at 25°C ambient and 48.1A at 25°C case temperature. With a maximum Rds(on) of 13.5mOhm at 10A and 10V, it provides excellent conduction efficiency. The device supports drive voltages up to 10V and features a gate charge of 48nC at 10V. Its PowerPAK® SO-8 package allows for efficient thermal management, with a maximum power dissipation of 5W ambient and 78W case temperature. Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for use in industrial, automotive, and power supply designs.
Additional Information
Series: TrenchFET® Gen IVRoHS Status: unknownManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.1A (Ta), 48.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 78W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 75 V |
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