SIR572DP-T1-RE3
N-CHANNEL 150 V (D-S) MOSFET POWManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIR572DP-T1-RE3 is an N-Channel Power MOSFET from the TrenchFET® Gen V series. This surface mount device, packaged in a PowerPAK® SO-8, offers a Drain-to-Source voltage (Vdss) of 150 V. It features a continuous drain current capability of 14.8 A at ambient temperature (Ta) and 59.7 A at case temperature (Tc). The maximum power dissipation is 5.7 W (Ta) and 92.5 W (Tc). Key electrical parameters include a maximum Rds On of 10.8 mOhm at 10 A and 10 V, a gate charge (Qg) of 54 nC at 10 V, and an input capacitance (Ciss) of 2733 pF at 75 V. The operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: TrenchFET® Gen VRoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14.8A (Ta), 59.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.8mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.7W (Ta), 92.5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2733 pF @ 75 V |
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