SIR5710DP-T1-RE3
N-CHANNEL 150 V (D-S) MOSFET POWManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SIR5710DP-T1-RE3 is an N-Channel Power MOSFET designed for demanding applications. This TrenchFET® series device features a Drain-to-Source Voltage (Vdss) of 150 V and offers a continuous drain current of 7.8 A at 25°C ambient temperature, scaling to 26.8 A under continuous drain conditions at 25°C case temperature. With a low on-resistance of 31.5 mOhm maximum at 10A and 10V, this MOSFET ensures efficient power delivery. The device is housed in a compact PowerPAK® SO-8 package, suitable for surface mounting. Key electrical parameters include a gate charge (Qg) of 15 nC maximum at 10 V and input capacitance (Ciss) of 770 pF maximum at 75 V. The operating temperature range is -55°C to 150°C. This component is utilized in power supply units, motor control, and other industrial power management systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.8A (Ta), 26.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 31.5mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4.8W (Ta), 56.8W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 770 pF @ 75 V |
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