SIR570DP-T1-BE3
N-CHANNEL 150 V (D-S) 175 C MOSFManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIR570DP-T1-BE3 is a N-channel MOSFET designed for 150 V (D-S) operation at junction temperatures up to 175°C. This power MOSFET offers exceptional performance characteristics for demanding applications. Engineered with advanced trench technology, it delivers low R_DS(on) and optimized gate charge for efficient switching. The SIR570DP-T1-BE3 is ideal for power management solutions in industrial automation, electric vehicle charging systems, and high-power server power supplies. Its robust construction and high temperature capability ensure reliability in challenging operating environments. Packaged in a Tape & Reel (TR) for automated assembly.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
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