SIR5708DP-T1-RE3
N-CHANNEL 150 V (D-S) MOSFET POWManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIR5708DP-T1-RE3, an N-Channel MOSFET from the TrenchFET® series, offers a 150V drain-source breakdown voltage. This surface mount device, packaged in a PowerPAK® SO-8, provides a continuous drain current of 9.5A at 25°C ambient and 33.8A at 25°C case temperature. Maximum power dissipation is 5.2W ambient and 65.7W case. Key parameters include a maximum Rds(On) of 23mOhm at 10A and 10V, and a gate charge (Qg) of 20 nC at 10V. Input capacitance (Ciss) is 975 pF at 75V. The operating temperature range is -55°C to 150°C. This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Ta), 33.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.2W (Ta), 65.7W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 975 pF @ 75 V |
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