SIR5623DP-T1-RE3
P-CHANNEL 60 V (D-S) MOSFET POWEManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIR5623DP-T1-RE3 is a P-channel Power MOSFET in a PowerPAK® SO-8 package. This device features a 60 V drain-source breakdown voltage and a maximum continuous drain current of 10.5 A at 25°C ambient and 37.1 A at 25°C case temperature. The on-resistance (Rds(on)) is specified at a maximum of 24 mOhm at 10 A drain current and 10 V gate-source voltage. With a power dissipation of 4.8 W (Ta) and 59.5 W (Tc), this MOSFET is suitable for demanding power applications. Key electrical parameters include a gate charge of 33 nC at 10 V and input capacitance of 1575 pF at 30 V. The operating temperature range is -55°C to 150°C. This component is utilized in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.5A (Ta), 37.1A(Tc) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4.8W (Ta), 59.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1575 pF @ 30 V |
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