SIR5607DP-T1-RE3
P-CHANNEL 60 V (D-S) MOSFET POWEManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SIR5607DP-T1-RE3 is a P-channel MOSFET designed for high-efficiency power switching applications. This device features a 60V drain-source breakdown voltage (Vdss) and offers a low on-resistance (Rds(on)) of 7mOhm maximum at 20A and 10V gate-source voltage. With a continuous drain current capability of 22.2A at 25°C ambient and 90.9A at 25°C case temperature, it supports significant power handling. The SIR5607DP-T1-RE3 is housed in a PowerPAK® SO-8 surface-mount package, facilitating compact designs. Key electrical parameters include a maximum gate charge (Qg) of 112 nC at 10V and a maximum input capacitance (Ciss) of 5020 pF at 30V. This component is suitable for use in various industrial sectors requiring robust power management solutions. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22.2A (Ta), 90.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 112 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5020 pF @ 30 V |
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