SIR516DP-T1-RE3
N-CHANNEL 100 V (D-S) MOSFET POWManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SIR516DP-T1-RE3 is an N-channel TrenchFET® MOSFET designed for high-efficiency power conversion. This device features a 100V drain-source breakdown voltage and a low on-resistance of 8mOhm maximum at 10A and 10V Vgs. It supports continuous drain currents of 16.8A at 25°C ambient and 63.7A at 25°C case temperature, with maximum power dissipation rated at 5W (ambient) and 71.4W (case). The SIR516DP-T1-RE3 utilizes a PowerPAK® SO-8 surface-mount package, ideal for space-constrained applications. Key parameters include a gate charge of 27nC at 10V and input capacitance of 1920pF at 50V. Operating temperature ranges from -55°C to 150°C. This component is suitable for applications in automotive, industrial, and consumer electronics requiring robust power management.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16.8A (Ta), 63.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 71.4W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1920 pF @ 50 V |
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