SIR514DP-T1-RE3
N-CHANNEL 100 V (D-S) MOSFET POWManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIR514DP-T1-RE3 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 100 V Drain-Source Voltage (Vdss) and supports a continuous drain current of 20.8 A at 25°C ambient temperature, scaling to 84.8 A under continuous drain at case temperature. The SIR514DP-T1-RE3 offers a low on-resistance of 5.8 mOhm maximum at 10 A and 10 V Vgs. With a maximum power dissipation of 5 W ambient and 83.3 W at case temperature, this MOSFET is suitable for demanding thermal environments. The component is housed in a PowerPAK® SO-8 package and utilizes advanced MOSFET technology. Key electrical parameters include a maximum gate charge (Qg) of 47 nC at 10 V and an input capacitance (Ciss) of 2550 pF at 50 V. Operating temperature range is -55°C to 150°C. This component is commonly employed in automotive, industrial, and power supply applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20.8A (Ta), 84.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 83.3W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2550 pF @ 50 V |
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