SIR512DP-T1-RE3
N-CHANNEL 100 V (D-S) MOSFET POWManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIR512DP-T1-RE3 is an N-Channel Power MOSFET with a Drain-to-Source Voltage (Vdss) of 100 V. This device features a low on-resistance of 4.5 mOhm maximum at 20A and 10V Vgs. The continuous drain current is specified at 25.1A (Ta) and 100A (Tc), with a maximum power dissipation of 6W (Ta) and 96.2W (Tc). Gate charge (Qg) is a maximum of 62 nC at 10 V, and input capacitance (Ciss) is 3400 pF maximum at 50 V. The MOSFET is housed in a PowerPAK® SO-8 surface mount package and operates across a temperature range of -55°C to 150°C. This component is commonly utilized in power management applications, automotive systems, and industrial equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25.1A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6W (Ta), 96.2W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3400 pF @ 50 V |
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