SIR5112DP-T1-RE3
N-CHANNEL 100 V (D-S) MOSFET POWManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SIR5112DP-T1-RE3 is an N-Channel Power MOSFET designed for demanding applications. This device features a 100V drain-source voltage (Vdss) and offers a continuous drain current of 12.6A at 25°C ambient temperature or 42.6A at 25°C case temperature. With a maximum Rds(on) of 14.9mOhm at 10A and 10V, and a maximum gate charge of 16 nC at 10V, it provides efficient power switching. The input capacitance (Ciss) is 790 pF at 50V. Operating from -55°C to 150°C, this MOSFET is housed in a PowerPAK® SO-8 surface mount package suitable for high-density designs. The maximum power dissipation is 5W ambient or 56.8W case. Applications include power management, automotive, and industrial systems where robust performance is critical.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.6A (Ta), 42.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 14.9mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 56.8W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 50 V |
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