SIR5110DP-T1-RE3
N-CHANNEL 100 V (D-S) MOSFET POWManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIR5110DP-T1-RE3 is an N-Channel TrenchFET® Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 100 V and offers a continuous drain current (Id) of 13.5 A at 25°C ambient and 47.6 A at 25°C case temperature. With a low on-resistance (Rds On) of 6 mOhm maximum at 35 A and 10 V gate drive, it minimizes conduction losses. The device supports drive voltages up to 10 V and has a maximum gate charge (Qg) of 20 nC at 10 V. Its high power dissipation capability, rated at 4.8 W ambient and 59.5 W case, makes it suitable for power management solutions. The SIR5110DP-T1-RE3 is housed in a Surface Mount PowerPAK® SO-8 package, ideal for automated assembly in sectors including automotive, industrial power, and consumer electronics. Operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: unknownManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.5A (Ta), 47.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4.8W (Ta), 59.5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 920 pF @ 50 V |
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