SIR510DP-T1-RE3
N-CHANNEL 100 V (D-S) MOSFET POWManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIR510DP-T1-RE3 is an N-channel MOSFET from the TrenchFET® Gen V series. This surface-mount device, housed in a PowerPAK® SO-8 package, offers a drain-source voltage (Vdss) of 100V. It features a continuous drain current capability of 31A at 25°C ambient (Ta) and 126A at 25°C case (Tc). The on-resistance (Rds On) is specified at a maximum of 3.6mOhm at 20A and 10V gate-source voltage. Power dissipation is rated at 6.25W (Ta) and 104W (Tc). Key parameters include a maximum gate charge (Qg) of 81 nC at 10V and input capacitance (Ciss) of 4980 pF at 50V. Operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in power management and high-efficiency switching.
Additional Information
Series: TrenchFET® Gen VRoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Ta), 126A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4980 pF @ 50 V |
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