SIR5108DP-T1-RE3
N-CHANNEL 100 V (D-S) MOSFET POWManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SIR5108DP-T1-RE3 is an N-Channel TrenchFET® PowerPAK® SO-8 MOSFET. This device features a 100 V drain-source breakdown voltage and offers a continuous drain current of 15.4 A at 25°C ambient temperature, scaling to 55.9 A under continuous drain at case temperature. Its low on-resistance is specified at a maximum of 7.45 mOhm at 10 A and 10 V gate-source voltage, with typical drive conditions requiring 7.5 V to 10 V. The SIR5108DP-T1-RE3 supports a maximum power dissipation of 5.2 W (ambient) and 65.7 W (case), with an operating temperature range of -55°C to 150°C. Key electrical parameters include a maximum gate charge of 23 nC at 10 V and a maximum input capacitance (Ciss) of 1150 pF at 50 V. This component is commonly utilized in power management applications across industrial and automotive sectors. It is supplied in tape and reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: unknownManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15.4A (Ta), 55.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.45mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.2W (Ta), 65.7W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 50 V |
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