SIR5102DP-T1-RE3
N-CHANNEL 100 V (D-S) MOSFET POWManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIR5102DP-T1-RE3 is an N-Channel TrenchFET® Gen V MOSFET designed for high-efficiency power conversion. This surface mount device features a Drain-Source Voltage (Vdss) of 100 V and offers a continuous drain current capability of 27A at 25°C ambient and 110A at 25°C case temperature. With a low on-resistance (Rds On) of 4.1mOhm at 20A and 10V, and a maximum power dissipation of 6.25W (ambient) or 104W (case), it is suitable for demanding applications. The device exhibits a gate charge (Qg) of 51 nC at 10V and an input capacitance (Ciss) of 2850 pF at 50V. Operating across a temperature range of -55°C to 150°C, this MOSFET is packaged in a PowerPAK® SO-8, supplied on tape and reel. Its performance characteristics make it ideal for use in automotive, industrial, and consumer electronics power management systems.
Additional Information
Series: TrenchFET® Gen VRoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta), 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.1mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2850 pF @ 50 V |
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