SIR500DP-T1-RE3
N-CHANNEL 30 V (D-S) 150C MOSFETManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 30 V 85.9A (Ta), 350.8A (Tc) 6.25W (Ta), 104.1W (Tc) Surface Mount PowerPAK® SO-8
Additional Information
Series: TrenchFET® Gen VRoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 85.9A (Ta), 350.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.47mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Ta), 104.1W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +16V, -12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8960 pF @ 15 V |
Request a Quote
Clients Also Buy
SISS54DN-T1-GE3
N-CHANNEL 30-V (D-S) MOSFET POWE
SIDR5802EP-T1-RE3
N-CHANNEL 80 V (D-S) 175C MOSFET
SIZF5302DT-T1-RE3
MOSFET 2N-CH 30V 28.1A PWRPAIR
