SIR494DP-T1-GE3
MOSFET N-CH 12V 60A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SIR494DP-T1-GE3 is a 12V N-Channel Power MOSFET in a PowerPAK® SO-8 package. This device offers a continuous drain current of 60A (Tc) with a maximum Rds(on) of 1.2mOhm at 20A and 10V Vgs. Key parameters include a gate charge (Qg) of 150 nC (max) at 10V Vgs and an input capacitance (Ciss) of 6900 pF (max) at 6V Vds. With a power dissipation of 104W (Tc), it is suitable for demanding applications. The MOSFET operates across a temperature range of -55°C to 150°C (TJ) and is supplied on tape and reel. This component finds utility in power management solutions across automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6900 pF @ 6 V |