SIR492DP-T1-GE3
MOSFET N-CH 12V 40A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SIR492DP-T1-GE3 is an N-Channel Power MOSFET designed for demanding applications. This device features a 12V drain-source voltage (Vdss) and a continuous drain current (Id) of 40A at 25°C (Tc), with a maximum on-resistance (Rds On) of 3.8mOhm at 15A and 4.5V. The SIR492DP-T1-GE3 utilizes Vishay's advanced TrenchFET® technology for low on-resistance and high efficiency. It is packaged in a PowerPAK® SO-8 surface-mount configuration, offering excellent thermal performance with a maximum power dissipation of 36W (Tc). Key electrical parameters include a maximum gate charge (Qg) of 110 nC at 8V and input capacitance (Ciss) of 3720 pF at 6V. Operating across a temperature range of -50°C to 150°C (TJ), this MOSFET is suitable for use in power management, automotive, and industrial systems. The device is supplied on tape and reel.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 15A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 4.2W (Ta), 36W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3720 pF @ 6 V |
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